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WebRBN50H65TGPQ‐A0 I company RBN50H65T1FPQ-A0 4.3 2.4 6.4 8.9 12.6 15.6 2.9 2.2 1.4 1.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 RBN50H65TGPQ‐A0 I company Loss ( W ) Result of loss analysis FRD recovry FRD cond IGBT cond IGBT on IGBT off 27.6 29.5 TEST RESULT (650V/50A) Measurement result of efficiency Result of loss analysis Low Noise ... WebJan 7, 2024 · RBN75H125S1FP4-A0#CB0 Mfr.: Renesas Electronics Renesas Electronics. Customer #: Description: Renesas Electronics POWER TRANSISTOR 1250V IGBT 75A G8H … how did geography help the byzantine empire
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WebRBN25H125S1FPQ-A0#CB0 Renesas Electronics IGBT Transistors IGBT-G8H 1250V/25A built-in FRD TO247A datasheet, inventory, & pricing. WebRBN75H125S1FP4-A0 R07DS1382EJ0132 Rev.1.32 Page 3 of 11 Jun 19, 2024 Electrical Characteristics (Tc = 25 C) Item Symbol Min Typ Max Unit Test Conditions Collector to emitter leakage current ICES 200 A VCE = 1250 V, VGE = 0 V Gate to emitter leakage current IGES ±1 A VGE = ±30 V, VCE = 0 V WebRBN75H125S1FP4-A0 Datasheet 1250V - 75A - IGBT - Renesas Technology Corp. Electronic Components Datasheet Search English Chinese: German: Japanese: Russian: Korean ... Match&Start with "RBN75H125S1FP4"-Total : 1 ( 1/1 Page) Manufacturer: Part No. Datasheet: Description: Renesas Technology Corp: RBN75H125S1FP4-A0 336Kb / 5P: how did geography shape chinese culture